Executive Summary : | The demand for higher performance and power-efficient computing systems is increasing, necessitating the development of low-power/high-density Non-Volatile memory (NVM) devices. Resistive Random-Access Memory (RRAM) is a promising technology due to its faster speed, low power consumption, long data retention time, and high-density scaling potential. However, RRAM devices based on binary transition metal oxide (TMO) have high on/off ratios and fast switching times, but they require higher voltages than advanced CMOS operating voltages. This increases power consumption and size when integrated into memory arrays. There is a critical need to explore alternative RRAM materials with lower operating voltages. Two-dimensional (2D) materials have emerged as a solution to address the shortcomings of TMO-RRAMs. By controlling layer thickness down to a monolayer, the variability effect can be reduced and operating voltages can be reduced further. Additionally, vacancy defects in 2D materials can initiate conductive filament formation, enabling the possibility of forming-free RRAMs. This project aims to investigate 2D materials as an alternative material solution to address existing issues in RRAM technologies. In-house experimental and characterization capabilities will be set up to carry out material growth using chemical vapor deposition (CVD), optimization toward targeted applications, material characterization, and study device properties. Simulation tools and models will be developed to understand growth dynamics and the role of defects in the conductive filament formation process in these materials. |