Research

Physical Sciences

Title :	Computational study of the role of elastic anisotropy surface stress and Compositional seggregation in Ge-Si coherent heteroepitaxial growth
Area of Research :	Physical Sciences
Focus Area :	Ge-Si Coherent heteroepitaxial growth
Principal Investigator :	Dr. Madhav Ranganathan, Associate Professor, Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016
Contact info :	madhavr@iitk.ac.in
Timeline Start Year :	2016
Total Budget (INR):	24,44,200

Implementing Agency :	Department of Chemistry, Indian Instiute of Technology (IIT), Kanpur, Uttar Pradesh, 208016
Funding Agency :	Science and Engineering Research Board (SERB), Department of Science & Technology (DST), Government of India