US8586151: Process for the preparation of photoluminescent nanostructured silicon thin films using radio frequency plasma discharge

A process for the preparation of nano structured silicon thin film using Radio Frequency (RF) plasma discharge useful for light emitting devices such as light emitting diode, laser etc., which allows precise control of the nanocrystal size of silicon and its uniform distribution without doping using a plasma processing for obtaining efficient photoluminescence at room temperature.