Executive Summary : | Two-dimensional transition metal dichalcogenides (MX₂) are highly desirable due to their potential applications in various fields, including optical, electronics, magnetics, optoelectronics, and spintronics. TMDs are indirect bandgap semiconductors in their bulk form, which undergo an indirect-to-direct transition when their dimensionality reduces to 2D. Researchers have found that the indirect to direct bandgap can increase from 1.00, 1.10, 1.30, and 1.35 eV to 1.90, 1.55, 2.05, and 1.65 eV to reduce the dimension from bulk to monolayer of MoS₂, MoSe₂, WS₂, and WSe₂, respectively. To synthesize a clean and functional-group-free monolayer of a particular TMD, the chemical vapour deposition technique (CVD) is a feasible relief from chemical synthesis and chemical exfoliation of TMD bulk crystals. To enhance the lateral dimension of a single layer of single-crystalline TMD, growth-alignment of the crystal orientation is crucial. The most effective solution for aligning the domain orientation and enlarging the lateral dimension of the 2D TMD layer is epitaxial growth on a single crystalline template. However, there are several problems with growing single-layer continuous alignment of domains by stitching unidirectionally grown islands and transferring the 2D TMD monolayer from these substrates to another substrate or solution as per applicational requirements. This project aims to address these difficulties and investigate the heterostructure for modern-day applications in electronics, optoelectronics, and spintronics devices. |