Research
Title : | Physical modeling of Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) with field plate structure for High Power. High frequency and Highly Efficient Power Amplifiers |
Area of Research : | Material Sciences |
Focus Area : | Gallium Nitride High Electron Mobility Transistor |
Principal Investigator : | Prof. R. S. Gupta, Professor, Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology (MAIT), New Delhi |
Contact info : | rsgupta1943@gmail.co m |
Timeline Start Year : | 2017 |
Timeline End Year : | 2020 |
Total Budget (INR): | 32,60,000 |
Details
Organizations involved
Implementing Agency : | Maharaja Agrasen Institute of Technology (MAIT), New Delhi Funding Agency :Defence Research and Development Organization (DRDO), Govt. of India | |