Executive Summary : | Low-dimensional forms of TMDs are promising for applications in sensors, memory, spintronic, and optoelectronic devices. These materials have novel properties like tunable bandgap, optical, and magnetic properties. Current scaling issues in MOSFET and memory devices lead to higher current leakage, short channel effect, higher power dissipation, retention, thermal stability, and low ON-OFF ratio. Nano sensors are an important application of TMDs, as they face problems like narrow temperature range, shorter life span, and cross-sensitivity of other gases. High-performance TMD materials like MoS2, WS2, and others are already reported for memory device applications. The magnetic properties of these materials can be modified by adsorption, intercalation, and doping. Improved materials can be implemented in MTJ devices for better device performance. Thermal stability and endurance are important parameters that impact the working of MTJ as a reliable memory device. The study of thermal stability (Δ) is critical in understanding the efficient working of STT-MRAM devices, which define long-term performance and data retention probability. STT-MRAM with MTJ as a basic unit is seen as the next generation reliable memory, despite issues like high write current and higher power consumption. Field switching MRAM is more reliable than STT-MRAM, as MTJ breakdown due to high biasing voltage leads to shorter lifetime and long writing latencies. |