Executive Summary : | The field of advanced flexible electronics has grown rapidly in recent decades, focusing on low-cost, large-area, and low power-consuming electronics. The three-terminal floating gate thin-film memory transistor (memory TFT) is an essential component of these systems, which can be fabricated using a solution processing compatible technique. The first demonstration of floating memory TFT was in 1967 using silicon nitride charge storage layers. However, this technology is incompatible with large area, flexible, and low-cost electronics due to process integration issues. Solution-processed spin-coated flexible memory TFT has been developed for flexible electronics, but these devices are easily degradable in elevated temperatures. This project proposal aims to build high-performance, robust, and flexible solid-state flash memory technology using a low-cost solution-processed technique. The research group will focus on fabricating a completely oxide-based, inorganic, and solution-processed, controllable, and flexible flash memory device using oxide dielectric film as the charge trapping layer. The research group will address obstacles to building flexible semiconductor flash memory technology for modern electronics, focusing on building large array devices capable of storing more data. A new measurement technique will be introduced to characterize memory devices, and commercial devices will be designed according to consumer needs. |