Executive Summary : | The development of gate-all-around (GAA) FETs has become increasingly important in the nano regime due to the increasing degradation of carrier mobility with SCEs. The nanowire GAA devices offer an ultimate structure for electrostatic control, allowing for the shortest effective channel length. However, there is still a need to achieve enhanced performance as degradation of carrier mobility increases with sub-20nm technology nodes. The tri-layered strained Nano-system channel engineered concept, recently installed in FinFET, showed an effective enrichment of nearly 60% in 14nm technology with reduced SCEs. This is being proposed to be induced in the GAA. The device is expected to form a Nanowire channel due to the channel thinning effect and all-side gate structure. A Type-II based quantum well barrier (QWB) hetero-system will be introduced at 10nm gate lengths. The inculcated SCEs such as subthreshold swing, BTBT, quantum tunneling, quasi-ballistic transport, GIDL, hot carrier confinement, and fringing effect will be analyzed due to the formation of QWB systems in the strained channel GAA device. Various GAA structures, including triangular, sectorial, cylindrical, and high-k dielectrics, will be developed, analyzed, and optimized to estimate feasibility and performance enrichment. Monte Carlo approximations with Greens Theorem and quantum tunneling phenomenon will be used for device analysis. The proposed QWB Nanowire GAA device is anticipated to perform superfast switches, meet future technology requirements, and be commercialized for future technological applications at the nano regime. |