Executive Summary : | This project proposes a low-cost solution-processed spectrum selective, spectrum selective photodetector from UV B to UB A region. The spectrum selectivity of the photodetector can be achieved through device structural engineering. The photodetector will be fabricated using ZQDs/GQD hybrid film on a glass, Silicon substrate, and transparent conducting oxides. The ZQDs will provide discrete absorption and a large surface-to-volume ratio, while GQDs will enhance the conductivity of the surface. The nanoparticle layer acts as an optical filter and scatterer, resulting in effective absorption of light in the active ZnO QDs over a very narrow wavelength region. The research will involve electro-optical characterization, photocurrent vs wavelength, responsivity vs wavelength, and transient response characteristics under dark and illuminations. Optical and structural measurements of the prepared ZnO QDs and graphene quantum dots will be performed using UV-visible, FTIR, SEM, XRD, and TEM. The wideband gap semiconductor has potential applications in UV-phototherapy, flame detection, chemical agent sensing, missile warning systems, fluorescence detection, night vision, and optical communication. The spectrum selective behavior of the photodetector will provide accurate detection accuracy. The use of low-cost solution processing nanoparticle scattering/filtering and graphene quantum dots (GQDs) will help monitor the selectivity and responsivity of the photodetector. |