Research
Title : | Design and Investigation of High Performance In0.52Al0.48As/In0.53Ga0.47As MOSFET with optimized switching efficiency. |
Area of research : | Engineering Sciences |
Principal Investigator : | Dr. Kaushik Mazumdar, Indian Institute Of Technology (Indian School Of Mines) IIT(ISM) Dhanbad, Jharkhand |
Timeline Start Year : | 2022 |
Timeline End Year : | 2024 |
Contact info : | kaushik_edu@yahoo.co.in |
Details
Executive Summary : | This research investigates the DC performance of three MOSFETs with different channel lengths (40 nm, 200 nm, 800 nm) and highly doped source and drain regions. A high-performance smart MOSFET is designed, achieving a large current of 20 mA/µm for a 40 nm channel length MOSFET. Two cap layers are designed in both source and drain regions, with thicknesses of 40 nm and 8 nm respectively. Each cap layer is divided into three layers with different doping concentrations, with the doping concentration decreasing from upper to lower layers to reduce kink effect. |
Total Budget (INR): | 30,10,000 |
Organizations involved
Implementing Agency : | Indian Institute Of Technology (Indian School Of Mines) IIT(ISM) Dhanbad, Jharkhand Funding Agency :Anusandhan National Rsearch Foundation (ANRF)/Science and Engineering Research Board (SERB) | Source :Science and Engineering Research Board (SERB), DST 2022-23 | |