Executive Summary : | Memristors are evolving as the electronic counterpart of biological synapses, with resistance-tunable features that make them efficient. Memristors based on ferroelectric polarization assisted quantum tunneling can work efficiently due to their limited energy requirements. Ferroelectric oxides and polymer ferroelectric based memristors have limitations due to their high coercive field and low remnant polarization, which affects memory state retention. A proposal is to develop ferroelectric semiconductors with low coercive field and high remnant polarization by rationally designing hybrid halide perovskites. These hybrid perovskite ferroelectrics exhibit very low coercive field and high remnant polarization compared to oxides and polymers. The researchers plan to design newer compositions of hybrid perovskites and explore existing ones to optimize the combination of ferroelectricity and semiconducting properties, improving memristor device performance. The ferroelectric hybrid perovskites are expected to harvest mechanical energy as piezoelectric nanogenerators (PNGs), which can be fed to the memristor to build mechano-perturbed memristors. This coupling strategy will help generate databases for vibration-induced perturbation. However, the fast decay of PNGs' output voltage can be a major issue due to rapid depolarization of the polarization field. To address this issue, the researchers will design the interfacial dielectric layer with semiconducting polymers at the nanoscale-level, which will help the ferroelectric memristor retain polarization. |