Research

Physical Sciences

Title :

Low- temperature epitaxial growth of high mobility ge1-xsnx channel material for pt/tin/high-k/GeOXNY/Ge1-XSnX/Ge/Si transistor to the integration of next generation CMOS and optoelectronics device on cost effective Si platform

Area of research :

Physical Sciences

Focus area :

Optoelectronics device

Principal Investigator :

Dr. Satinder Kumar Sharma, Associate Professor, School of Computing & Electrical Engineering, Indian Institute of Technology (IIT) Mandi, Himachal Pradesh

Timeline Start Year :

2019

Timeline End Year :

2021

Contact info :

Details

Total Budget (INR):

6,57,814

Organizations involved