Executive Summary : | Recent data storage and information processing technology relies on perpendicular magnetic anisotropy (PMA) media for scalability, thermal stability, low power consumption, and ultra-fast speed in MRAM devices. Spin transfer torque (STT) is the primary technology in conventional MRAMs, but it faces issues like high power consumption and decoherent magnetization reversal. The electric field (E-field) manipulation of magnetization state has led to the development of new functional devices for memory applications, such as magnetoelectric (ME) random access memories (MERAM). The fabrication of new functional devices based on ME heterostructures, such as CoFe thin films, is proposed to achieve E-field controlled PMA in FM thin films. Magnetic multilayered nanostructures like magnetic tunnel junctions (MTJs) or spin valves have practical applications in magnetic recording and storage devices. The interlayer exchange coupling (IEC) between two ferromagnetic (FM) layers via nonmagnetic spacer layers is proposed to be modulated in CoFe-based spin valves with nonmagnetic metal spacers. The engineered ME multilayered heterostructures and designed spacer layers between potential magnetic layers provide opportunities to switch magnetization in a controlled way. Modern broadband ferromagnetic resonance (FMR) plays a key role in characterization techniques for resolving spin dynamics in nano-scale magnetic systems and studying spin waves in wide frequency ranges. The use of spin degrees of freedom for carrier information and E-field control in memory devices and ultra-low power consumption during information processing will have urgent impacts on the advanced spintronics and magnonics society. |