Executive Summary : | Single layer (1L)-MoS₂ is a promising class of two-dimensional (2D) materials with a direct bandgap of ~1.9 eV, making it suitable for electronic and optoelectronic applications. The material has features such as large exciton binding energy, numerous body bound states, and valley polarization, which can be used to inject spin polarized carriers and excitons for future devices. Due to its less than a nanometer thickness, lower dielectric constant, higher electron effective mass, and larger band gap than silicon, 1L-MoS₂ is a superior choice for larger scale device integration. Field effect transistors (FET) are fabricated on 1L MoS₂ layers, showing great potential for amplification and logic applications. However, most studies have focused on mechanically exfoliated 1L-MoS₂ chunks. To realize 1L-MoS₂-based electronics or optoelectronic devices, controlled growth of films with large area coverage is necessary. For large-scale integration of FETs on 1L-MoS₂ platforms, challenges like reduced contact resistance, stable and controllable doping schemes, electron mobility improvement, and high-κ dielectric integration must be overcome. A microcavity-based CVD technique has been developed to grow monolayer 1L-MoS₂ with large area coverage, but the major challenge is dealing with sulphur vacancy defects present in these films. The proposed method involves growing monolayer MoS₂ with large area coverage on c-sapphire and SiO₂ substrates using the microcavity-based CVD technique. The influence of capping on carrier mobility, luminescence, and valley polarization properties will be investigated, and fabrication of FETs and logic gates on these controllably doped large area 1L-MoS₂ films will be attempted. |