Executive Summary : | This proposal aims to create fully transparent or see-through electronics in the next-generation machine and human interface technologies, attracting big companies like Samsung, NXP semiconductor, and LG Electronics. The goal is to make all components of the OTFT device transparent, allowing visible light to easily pass-through circuitry, achieving a high aperture ratio with low power consumption. Transparent electrodes for source and drain will be explored, as conventional transparent electrodes, such as indium-tin-oxide (ITO), offer high contact resistance and poor device performance. Organic semiconductors for active channels will be explored, with 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) being a potential choice due to its high transparency and mobility. The interface between the active channel and insulator is crucial for Field Effect Transistor (FET)-based devices, and a transparent dielectric material, such as cross-linked polyvinyl alcohol (PVA), will be explored to ensure quality. Optimization of the device will be carried out by developing compact models using standard Technology Computer-Aided Design simulation tools. Fabrication of optimized devices will help develop OTFT prototypes with customized performance. The proposal will also study issues related to transparency, flexibility, and stability of the OTFT. |