Executive Summary : | Gate-All-Around (GAA) nanosheet (NS) transistors are expected to replace FinFETs in advanced logic technology nodes, with lateral nanosheet FET (LNS-GAA) potentially becoming the 3nm Complementary MOS (CMOS) technology node in the near future. NS-FET offers design flexibility in terms of width, thickness, orientation, stress, and lateral or vertical arrangement. To achieve an optimum design, the physics of the device at the nanoscale, such as quantum confinement and quantum transport, need to be investigated. Simulation studies are typically conducted to find out the characteristics or behavior of the device due to the complexities of coupled, non-linear differential equations, intricate geometry, and associated boundary conditions. The finite element method is suitable for complex device geometry with irregular boundaries. A new paradigm of 3D FEM-based user-friendly, fast, and accurate simulation tool is proposed to explore non-idealities and quantum effects for the comprehensive analysis and design of emerging nanoelectronics devices. The approach will uniquely combine FEM techniques with atomistic modeling frameworks, requiring a high-performance computer cluster for performing these simulations. The performance of highly scaled area efficient Complementary Metal-Oxide-Semiconductor (CMOS) devices like GAA Nanowire/Nano-sheet FET relies on accurate control of their interfaces, including composition, nature of atomic species, defects in the bulk and interfaces, and variations as a function of temperature, stress, and applied electric field. The main development work includes developing multiscale models for analyzing quantum transport for NS-FET, installing a high-performance computer cluster, integrating Quantum Expresso with QDSIM, running atomistic simulations in Quantum Expresso, running device simulations on QDSIM, modeling various materials, interface defects, orientation, geometries, stress, and validating device characteristics with experimental data. |
Co-PI: | Dr. Rajan Kumar Pandey, Vellore Institute Of Technology (Vit),Vellore Campus, Tamil Nadu-632014, Dr. Aakash Kumar Jain, Indian Institute Of Information Technology, Design And Manufacturing, Kancheepuram, Tamil Nadu-600127 |