Research

Physical Sciences

Title :

Investigation of ultrafast carrier dynamics, transport and resistive switching behavior of two-dimensional perovskites

Area of research :

Physical Sciences

Principal Investigator :

Prof. Suman Kalyan Pal, Indian Institute Of Technology (IIT) Mandi, Himachal Pradesh

Timeline Start Year :

2023

Timeline End Year :

2026

Contact info :

Equipments :

Details

Executive Summary :

Metal halide perovskites have been a significant advancement in optoelectronic applications, particularly in solar cells. However, their long-term stability remains a major obstacle to their commercialization. To address this, larger organic cations are incorporated into the three-dimensional (3D) structure, resulting in a two-dimensional (2D) structure. This 2D structure provides operational stability and excellent structural diversity. Despite its potential, the performance of 2D perovskite devices is not impressive due to the generation and recombination efficiencies, mobility, and diffusion length of charge carriers. Understanding the dynamics and transport properties of charge carriers is crucial for improving the performance of these devices. This proposal will investigate the dynamics of excited carriers in 2D halide perovskites using ultrafast time-resolved terahertz and transient absorption spectroscopy. The study will also explore the mechanisms of hot-carrier cooling, electron-phonon interaction, and recombination of band edge carriers. The charge transport properties of 2D perovskites will also be explored. The study aims to investigate the effect of surface modification by 2D perovskites on carrier dynamics in bulk perovskites. Additionally, the study will investigate resistive switching behavior of 2D halide perovskites by fabricating ReRAM devices. The proposed studies aim to provide a clear understanding of the dynamical behavior of photogenerated charge carriers in 2D halide perovskites, which could improve the efficiency of 2D perovskites-based devices. The knowledge gained from the study of resistive switching property will also help develop efficient ReRAM devices.

Total Budget (INR):

89,06,832

Organizations involved